Beatriz
García Vasallo
Profesora Titular de Universidad
Sylvain
Bollaert
Publicaciones en las que colabora con Sylvain Bollaert (18)
2018
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Impact ionization and band-to-band tunneling in InxGa1-xAs PIN ungated devices: A Monte Carlo analysis
Journal of Applied Physics, Vol. 123, Núm. 3
2017
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Monte Carlo analysis of III-V PIN diodes for tunnel-FETs and Impact Ionization-MOSFETs
2017 Spanish Conference on Electron Devices, CDE 2017
2015
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Improvement of interfacial and electrical properties of Al2O3/ n-Ga0.47In0.53As for III-V impact ionization MOSFETs
Journal of Physics: Conference Series
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Monte Carlo model for the analysis and development of III-V Tunnel-FETs and Impact Ionization-MOSFETs
Journal of Physics: Conference Series
2010
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Monte Carlo study of the dynamic performance of a 100-nm-gate InAlAs/InGaAs velocity modulation transistor
IEEE Transactions on Electron Devices, Vol. 57, Núm. 10, pp. 2572-2578
2009
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Fabrication and fundamentals of operation of an InAlAs/InGaAs velocity modulation transistor
Applied Physics Letters, Vol. 94, Núm. 10
2008
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Ballistic nanodevices for high frequency applications
International Journal of Nanotechnology, Vol. 5, Núm. 6-8, pp. 796-808
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Comparison between the noise performance of double- and single-gate InP-based HEMTs
IEEE Transactions on Electron Devices, Vol. 55, Núm. 6, pp. 1535-1540
2007
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Ballistic nano-devices for high frequency applications
Thin Solid Films, Vol. 515, Núm. 10, pp. 4321-4326
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Comparison between the dynamic performance of double- and single-gate AlInAs/InGaAs HEMTs
IEEE Transactions on Electron Devices, Vol. 54, Núm. 11, pp. 2815-2822
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Monte Carlo comparison between InAlAs/ InGaAs double-gate and standard HEMTs
2007 Spanish Conference on Electron Devices, Proceedings
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Noise behavior of InP-based double-gate and standard HEMTs: A comparison
AIP Conference Proceedings
2006
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InP-based InAlAs/InGaAs double-gate transistors beyond conventional HEMT's limitations
Proceedings of the 1st European Microwave Integrated Circuits Conference, EuMIC 2006
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Monte Carlo comparison between InP-based double-gate and standard HEMTs
Proceedings of the 1st European Microwave Integrated Circuits Conference, EuMIC 2006
2004
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Nonlinear effects in T-branch junctions
IEEE Electron Device Letters
2003
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Ballistic nanodevices for terahertz data processing: Monte Carlo simulations
Nanotechnology, Vol. 14, Núm. 2, pp. 117-122
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Microscopic modeling of nonlinear transport in ballistic nanodevices
IEEE Transactions on Electron Devices, Vol. 50, Núm. 9, pp. 1897-1905
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Room temperature nonlinear transport in InGaAs/AlInAs based ballistic nanodevices
Conference Proceedings - International Conference on Indium Phosphide and Related Materials