Publicaciones en las que colabora con Daniel Pardo Collantes (27)

2011

  1. Monte carlo analysis of the dynamic behavior of InAlAs/InGaAs velocity modulation transistors: A geometrical optimization

    Acta Physica Polonica A

2010

  1. Monte Carlo study of the dynamic performance of a 100-nm-gate InAlAs/InGaAs velocity modulation transistor

    IEEE Transactions on Electron Devices, Vol. 57, Núm. 10, pp. 2572-2578

2009

  1. Fabrication and fundamentals of operation of an InAlAs/InGaAs velocity modulation transistor

    Applied Physics Letters, Vol. 94, Núm. 10

  2. Monte Carlo study of an InAlAs/InGaAs velocity modulation transistor

    Proceedings of the 2009 Spanish Conference on Electron Devices, CDE'09

2008

  1. Comparison between the noise performance of double- and single-gate InP-based HEMTs

    IEEE Transactions on Electron Devices, Vol. 55, Núm. 6, pp. 1535-1540

2007

  1. Comparison between the dynamic performance of double- and single-gate AlInAs/InGaAs HEMTs

    IEEE Transactions on Electron Devices, Vol. 54, Núm. 11, pp. 2815-2822

  2. Monte Carlo comparison between InAlAs/ InGaAs double-gate and standard HEMTs

    2007 Spanish Conference on Electron Devices, Proceedings

  3. Noise behavior of InP-based double-gate and standard HEMTs: A comparison

    AIP Conference Proceedings

2006

  1. Monte Carlo comparison between InP-based double-gate and standard HEMTs

    Proceedings of the 1st European Microwave Integrated Circuits Conference, EuMIC 2006

2005

  1. A simple approach for the fabrication of ultrafast unipolar diodes

    2005 Spanish Conference on Electron Devices, Proceedings

  2. Influence of kink effect on the dynamic and noise performance of short-channel InAlAs/InGaAs HEMTs

    2005 Spanish Conference on Electron Devices, Proceedings

  3. Influence of the kink effect on the dynamic performance of short-channel InAlAs/InGaAs high electron mobility transistors

    Semiconductor Science and Technology, Vol. 20, Núm. 9, pp. 956-960

  4. Kink effect in InAlAs/InGaAs short-channel HEMTs: Influence on the dynamic and noise performance

    Conference Proceedings - International Conference on Indium Phosphide and Related Materials

  5. Operation and high-frequency performance of nanoscale unipolar rectifying diodes

    Applied Physics Letters, Vol. 86, Núm. 21, pp. 1-3

  6. THz operation of self-switching nano-diodes and nano-transistors

    Proceedings of SPIE - The International Society for Optical Engineering

2004

  1. Kink-effect related noise in short-channel InAlAs/InGaAs high electron mobility transistors

    Journal of Applied Physics, Vol. 95, Núm. 12, pp. 8271-8274

  2. Monte Carlo analysis of four-terminal ballistic rectifiers

    Nanotechnology

  3. Nonlinear effects in T-branch junctions

    IEEE Electron Device Letters

  4. Operation of a novel nanoscale unipolar rectifying diode

    Conference Proceedings - International Conference on Indium Phosphide and Related Materials

  5. Room temperature nonlinear transport in ballistic nanodevices

    Semiconductor Science and Technology