Juan Antonio Delgado Notario-rekin lankidetzan egindako argitalpenak (13)

2024

  1. Terahertz Detection by Asymmetric Dual Grating Gate Bilayer Graphene FETs with Integrated Bowtie Antenna

    Nanomaterials, Vol. 14, Núm. 4

2023

  1. Enhancing resolution of terahertz imaging systems below the diffraction limit

    Optics and Laser Technology, Vol. 164

2022

  1. Electromagnetic Simulation to Determine Mesoscopic Dielectric Particle Parameters for Optimal Terajet Effect

    International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz

  2. Enhanced terahertz detection of multigate graphene nanostructures

    Nanophotonics, Vol. 11, Núm. 3, pp. 519-529

2021

  1. Electromagnetic Simulation of the Sub-THz Radiation Coupling to n-channel strained-silicon MODFETs

    International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz

  2. Imaging resolution enhancement using terajet effect at 0.3 THz

    Proceedings of SPIE - The International Society for Optical Engineering

  3. Numerical study of the coupling of sub-terahertz radiation to n-channel strained-silicon modfets

    Sensors (Switzerland), Vol. 21, Núm. 3, pp. 1-11

  4. Responsivity enhancement of a strained silicon field-effect transistor detector at 0.3 THz using the terajet effect

    Optics Letters, Vol. 46, Núm. 13, pp. 3061-3064

2020

  1. Effect of the front and back illumination on sub-terahertz detection using n-channel strained-silicon MODFETs

    Applied Sciences (Switzerland), Vol. 10, Núm. 17

  2. Improvement of a Terahertz Detector Performance Using the Terajet Effect in a Mesoscale Dielectric Cube: Proof of Concept

    Physica Status Solidi - Rapid Research Letters, Vol. 14, Núm. 5

2018

  1. Sub-THz Response of Strained-Silicon MODFETs

    Physica Status Solidi (A) Applications and Materials Science, Vol. 215, Núm. 4

2017

  1. Sub-Micron Gate Length Field Effect Transistors as Broad Band Detectors of Terahertz Radiation

    FUNDAMENTAL AND APPLIED PROBLEMS OF TERAHERTZ DEVICES AND TECHNOLOGIES

2016

  1. Sub-micron gate length field effect transistors as broad band detectors of terahertz radiation

    International Journal of High Speed Electronics and Systems