FÍSICA APLICADA
Departamento
Imperial College London
Londres, Reino UnidoPublicaciones en colaboración con investigadores/as de Imperial College London (86)
2023
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Enhancing resolution of terahertz imaging systems below the diffraction limit
Optics and Laser Technology, Vol. 164
2022
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Electromagnetic Simulation to Determine Mesoscopic Dielectric Particle Parameters for Optimal Terajet Effect
International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz
2021
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Electromagnetic Simulation of the Sub-THz Radiation Coupling to n-channel strained-silicon MODFETs
International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz
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Imaging resolution enhancement using terajet effect at 0.3 THz
Proceedings of SPIE - The International Society for Optical Engineering
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Numerical study of the coupling of sub-terahertz radiation to n-channel strained-silicon modfets
Sensors (Switzerland), Vol. 21, Núm. 3, pp. 1-11
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Responsivity enhancement of a strained silicon field-effect transistor detector at 0.3 THz using the terajet effect
Optics Letters, Vol. 46, Núm. 13, pp. 3061-3064
2020
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Effect of the front and back illumination on sub-terahertz detection using n-channel strained-silicon MODFETs
Applied Sciences (Switzerland), Vol. 10, Núm. 17
2018
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Author Correction: Femtosecond Laser Mass Spectrometry and High Harmonic Spectroscopy of Xylene Isomers (Scientific Reports (2018) DOI: 10.1038/s41598-018-22055-9)
Scientific Reports
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Femtosecond Laser Mass Spectrometry and High Harmonic Spectroscopy of Xylene Isomers
Scientific Reports, Vol. 8, Núm. 1
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Sub-THz Response of Strained-Silicon MODFETs
Physica Status Solidi (A) Applications and Materials Science, Vol. 215, Núm. 4
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Sub-THz imaging using non-resonant HEMT detectors
Sensors (Switzerland), Vol. 18, Núm. 2
2017
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Attosecond physics at the nanoscale
Reports on Progress in Physics, Vol. 80, Núm. 5
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Detection of terahertz radiation using submicron field effect transistors and their use for inspection applications
Proceedings of SPIE - The International Society for Optical Engineering
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Experimental and theoretical studies of Sub-THz detection using strained-Si FETs
Journal of Physics: Conference Series
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Sub-Micron Gate Length Field Effect Transistors as Broad Band Detectors of Terahertz Radiation
FUNDAMENTAL AND APPLIED PROBLEMS OF TERAHERTZ DEVICES AND TECHNOLOGIES
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Thermo-Electric Power Generators Using Gated Silicon Nanowires
Proceedings - UKSim-AMSS 11th European Modelling Symposium on Computer Modelling and Simulation, EMS 2017
2016
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Sub-micron gate length field effect transistors as broad band detectors of terahertz radiation
International Journal of High Speed Electronics and Systems
2015
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Enhancement of sub-terahertz detection by drain-to-source biasing on strained silicon MODFET devices
Journal of Physics: Conference Series
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High-order harmonic generation driven by plasmonic fields: A new route towards the generation of UV and XUV photons?
Journal of Physics: Conference Series
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Micrometric rods grown by nanosecond pulsed laser deposition of boron carbide
Applied Surface Science, Vol. 328, pp. 170-176