Publicaciones en las que colabora con Sergio García Sánchez (19)

2023

  1. 2D MoS2 under switching field conditions: Study of high-frequency noise velocity fluctuations

    Applied Physics Letters, Vol. 123, Núm. 5

  2. A Deep Learning-Monte Carlo Combined Prediction of Side-Effect Impact Ionization in Highly Doped GaN Diodes

    IEEE Transactions on Electron Devices, Vol. 70, Núm. 6, pp. 2981-2987

  3. High-Frequency Microwave Detection With GaN HEMTs in the Subthreshold Regime

    IEEE Transactions on Microwave Theory and Techniques

  4. On the Practical Limitations for the Generation of Gunn Oscillations in Highly Doped GaN Diodes

    IEEE Transactions on Electron Devices, Vol. 70, Núm. 7, pp. 3447-3453

  5. THz Oscillation in Doped-GaN Based Planar Gunn Diode with the T-shape Channel

    2023 18th European Microwave Integrated Circuits Conference, EuMIC 2023

2022

  1. Monte Carlo analysis of thermal effects in the DC and AC performance of AlGaN/GaN HEMTs

    Solid-State Electronics, Vol. 193

  2. Optimization of the Epilayer Design for the Fabrication of Doped GaN Planar Gunn Diodes

    IEEE Transactions on Electron Devices, Vol. 69, Núm. 2, pp. 514-520

2021

  1. Non-linear thermal resistance model for the simulation of high power GaN-based devices

    Semiconductor Science and Technology, Vol. 36, Núm. 5

2019

  1. Design and fabrication of planar gunn nanodiodes based on doped GaN

    Asia-Pacific Microwave Conference Proceedings, APMC

  2. GaN-based SSD structure for THz applications

    Asia-Pacific Microwave Conference Proceedings, APMC

2016

  1. Impact of substrate and thermal boundary resistance on the performance of AlGaN/GaN HEMTs analyzed by means of electro-thermal Monte Carlo simulations

    Semiconductor Science and Technology, Vol. 31, Núm. 6

2015

  1. Evaluation of the thermal resistance in GaN-diodes by means of electro-thermal Monte Carlo simulations

    Proceedings of the 2015 10th Spanish Conference on Electron Devices, CDE 2015

  2. Modelling of thermal boundary resistance in a GaN diode by means of electro-thermal Monte Carlo simulations

    Journal of Physics: Conference Series

  3. Self-consistent electro-thermal simulations of AlGaN/GaN diodes by means of Monte Carlo method

    Semiconductor Science and Technology, Vol. 30, Núm. 3

  4. Temperature and Surface Traps Influence on the THz Emission from InGaAs Diodes

    Journal of Physics: Conference Series

2014

  1. Comparative Monte Carlo analysis of InP- and GaN-based Gunn diodes

    Journal of Applied Physics, Vol. 115, Núm. 4

2013

  1. Modelado matemático para la generación de un mallado espacial con aplicación anano-estructuras semiconductoras

    Avances en Informática y Automática. Séptimo Workshop (Departamento de Informática y Automática), pp. 73-92

  2. Numerical study of sub-millimeter Gunn oscillations in InP and GaN vertical diodes: Dependence on bias, doping, and length

    Journal of Applied Physics, Vol. 114, Núm. 7

  3. Time-domain Monte Carlo simulations of resonant-circuit operation of GaN Gunn diodes

    Proceedings of the 2013 Spanish Conference on Electron Devices, CDE 2013