FÍSICA APLICADA Y TECNOLOGÍA
Escuela de doctorado
University of Montpellier
Montpellier, FranciaPublicaciones en colaboración con investigadores/as de University of Montpellier (93)
2024
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Small-signal equivalent circuit model of GaN-based nanodiodes at low temperature including trap-related low frequency dispersion
Journal of Applied Physics, Vol. 135, Núm. 4
2023
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Temperature dependance of Intrinsic Spin Orbit Coupling Gap in Graphene probed by Terahertz photoconductivity
International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz
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Terahertz Electronic Devices
Springer Handbooks (Springer Science and Business Media Deutschland GmbH), pp. 807-849
2022
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Temperature-dependent zero-field splittings in graphene
Physical Review B, Vol. 106, Núm. 24
2020
2019
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Spatial variability of the relationships of runoff and sediment yield with weather types throughout the Mediterranean basin
Journal of Hydrology, Vol. 571, pp. 390-405
2017
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Monte Carlo calculation of In0.53Ga0.47As and InAs noise parameters
2017 International Conference on Noise and Fluctuations, ICNF 2017
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Room temperature Terahertz subharmonic mixer based on GaNNanodiodes
27th International Symposium on Space Terahertz Technology, ISSTT 2016
2016
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Room temperature direct and heterodyne detection of 0.28-0.69-THz Waves Based on GaN 2-DEG unipolar nanochannels
IEEE Transactions on Electron Devices, Vol. 63, Núm. 1, pp. 353-359
2015
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0.69 THz room temperature heterodyne detection using GaN nanodiodes
Journal of Physics: Conference Series
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Broadband Characteristics of Ultrahigh Responsivity of Asymmetric Dual-Grating-Gate Plasmonic Terahertz Detectors
2015 40TH INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER AND TERAHERTZ WAVES (IRMMW-THZ)
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Elektron ų perna šos tūriniuose InGaAs ir InAs kambario temperat ūroje sav ybi ų apžvalga
Lithuanian Journal of Physics, Vol. 55, Núm. 4, pp. 305-314
2014
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Operation of GaN planar nanodiodes as THz detectors and mixers
IEEE Transactions on Terahertz Science and Technology, Vol. 4, Núm. 6, pp. 670-677
2013
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Extremely-High Sensitive Terahertz Detector based on Dual-Grating Gate InP-HEMTs
2013 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM)
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Extremely-high sensitive terahertz detector based on dual-grating gate InP-HEMTs
Conference Proceedings - International Conference on Indium Phosphide and Related Materials
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InP- and GaAs-based plasmonic high-electron-mobility transistors for room-temperature ultrahigh-sensitive terahertz sensing and imaging
IEEE Sensors Journal, Vol. 13, Núm. 1, pp. 89-99
2012
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Terahertz imaging using strained-Si MODFETs as sensors
2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings
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Ultrahigh sensitive plasmonic terahertz detection using asymmetric dual-grating gate HEMT structures
CLEO: Science and Innovations, CLEO_SI 2012
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Ultrahigh sensitive plasmonic terahertz detection using asymmetric dual-grating gate HEMT structures
2012 Conference on Lasers and Electro-Optics, CLEO 2012
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Ultrahigh sensitive plasmonic terahertz detector based on an asymmetric dual-grating gate HEMT structure
Solid-State Electronics