Monte Carlo Analysis of the Behavior and Spatial Origin of Electronic Noise in GaAs MESFET's

  1. González, T.
  2. Pardo, D.
  3. Varani, L.
  4. Reggiani, L.
Revue:
IEEE Transactions on Electron Devices

ISSN: 1557-9646,  0018-9383

Année de publication: 1995

Volumen: 42

Número: 5

Pages: 991-998

Type: Article

DOI: 10.1109/16.381998 GOOGLE SCHOLAR
La source de données: Scopus