Temperature dependence of submicrometer strained-Si surface channel n-type MOSFETs in DT mode

  1. Gaspari, V.
  2. Fobelets, K.
  3. Ding, P.W.
  4. Velazquez-Perez, J.W.
  5. Olsen, S.H.
  6. O'Neill, A.G.
  7. Zhang, J.
Aldizkaria:
IEEE Electron Device Letters

ISSN: 0741-3106

Argitalpen urtea: 2004

Alea: 25

Zenbakia: 5

Orrialdeak: 334-336

Mota: Gutuna

DOI: 10.1109/LED.2004.827286 GOOGLE SCHOLAR