Temperature dependence of submicrometer strained-Si surface channel n-type MOSFETs in DT mode

  1. Gaspari, V.
  2. Fobelets, K.
  3. Ding, P.W.
  4. Velazquez-Perez, J.W.
  5. Olsen, S.H.
  6. O'Neill, A.G.
  7. Zhang, J.
Revue:
IEEE Electron Device Letters

ISSN: 0741-3106

Année de publication: 2004

Volumen: 25

Número: 5

Pages: 334-336

Type: Lettre

DOI: 10.1109/LED.2004.827286 GOOGLE SCHOLAR
La source de données: Scopus