Effect of temperature on the transfer characteristic of a 0.5 μm-gate Si:SiGe depletion-mode n-MODFET

  1. Gaspari, V.
  2. Fobelets, K.
  3. Velazquez-Perez, J.E.
  4. Ferguson, R.
  5. Michelakis, K.
  6. Despotopoulos, S.
  7. Papavassilliou, C.
Journal:
Applied Surface Science

ISSN: 0169-4332

Year of publication: 2004

Volume: 224

Issue: 1-4

Pages: 390-393

Type: Conference paper

DOI: 10.1016/J.APSUSC.2003.08.066 GOOGLE SCHOLAR
Data source: Scopus