Monte Carlo study of the dynamic performance of a 100-nm-gate InAlAs/InGaAs velocity modulation transistor

  1. Vasallo, B.G.
  2. Wichmann, N.
  3. Bollaert, S.
  4. Roelens, Y.
  5. Cappy, A.
  6. González, T.
  7. Pardo, D.
  8. Mateos, J.
Revue:
IEEE Transactions on Electron Devices

ISSN: 0018-9383

Année de publication: 2010

Volumen: 57

Número: 10

Pages: 2572-2578

Type: Article

DOI: 10.1109/TED.2010.2058633 GOOGLE SCHOLAR
La source de données: Scopus