Monte Carlo study of impact ionization and hole transport in InAs HEMTs with isolated gate

  1. Vasallo, B.G.
  2. Rodilla, H.
  3. Gonzalez, T.
  4. Moschetti, G.
  5. Grahn, J.
  6. Mateos, J.
Proceedings:
Proceedings of the 8th Spanish Conference on Electron Devices, CDE'2011

ISBN: 9781424478637

Year of publication: 2011

Type: Conference paper

DOI: 10.1109/SCED.2011.5744246 GOOGLE SCHOLAR
Data source: Scopus