Monte Carlo study of impact ionization and hole transport in InAs HEMTs with isolated gate

  1. Vasallo, B.G.
  2. Rodilla, H.
  3. Gonzalez, T.
  4. Moschetti, G.
  5. Grahn, J.
  6. Mateos, J.
Actas:
Proceedings of the 8th Spanish Conference on Electron Devices, CDE'2011

ISBN: 9781424478637

Ano de publicación: 2011

Tipo: Achega congreso

DOI: 10.1109/SCED.2011.5744246 GOOGLE SCHOLAR
Fonte de datos: Scopus