Monte Carlo study of impact ionization and hole transport in InAs HEMTs with isolated gate

  1. Vasallo, B.G.
  2. Rodilla, H.
  3. Gonzalez, T.
  4. Moschetti, G.
  5. Grahn, J.
  6. Mateos, J.
Actes de conférence:
Proceedings of the 8th Spanish Conference on Electron Devices, CDE'2011

ISBN: 9781424478637

Année de publication: 2011

Type: Communication dans un congrès

DOI: 10.1109/SCED.2011.5744246 GOOGLE SCHOLAR