Bilayer h-BN barriers for tunneling contacts in fully-encapsulated monolayer MoSe2 field-effect transistors

  1. Ghiasi, T.S.
  2. Quereda, J.
  3. Van Wees, B.J.
Journal:
2D Materials

ISSN: 2053-1583

Year of publication: 2019

Volume: 6

Issue: 1

Type: Article

DOI: 10.1088/2053-1583/AADF47 GOOGLE SCHOLAR lock_openOpen access editor
Data source: Scopus