Bilayer h-BN barriers for tunneling contacts in fully-encapsulated monolayer MoSe2 field-effect transistors
- Ghiasi, T.S.
- Quereda, J.
- Van Wees, B.J.
Revue:
2D Materials
ISSN: 2053-1583
Année de publication: 2019
Volumen: 6
Número: 1
Type: Article
