Temperature and Gate-Length Dependence of Subthreshold RF Detection in GaN HEMTs

  1. Paz-Martínez, G.
  2. Íñiguez-De-la-torre, I.
  3. Sánchez-Martín, H.
  4. Novoa-López, J.A.
  5. Hoel, V.
  6. Cordier, Y.
  7. Mateos, J.
  8. González, T.
Journal:
Sensors

ISSN: 1424-8220

Year of publication: 2022

Volume: 22

Issue: 4

Type: Article

DOI: 10.3390/S22041515 GOOGLE SCHOLAR lock_openOpen access editor

Sustainable development goals

Data source: Scopus