Publicaciones en las que colabora con Sergio García Sánchez (13)

2023

  1. A Deep Learning-Monte Carlo Combined Prediction of Side-Effect Impact Ionization in Highly Doped GaN Diodes

    IEEE Transactions on Electron Devices, Vol. 70, Núm. 6, pp. 2981-2987

  2. On the Practical Limitations for the Generation of Gunn Oscillations in Highly Doped GaN Diodes

    IEEE Transactions on Electron Devices, Vol. 70, Núm. 7, pp. 3447-3453

2022

  1. Optimization of the Epilayer Design for the Fabrication of Doped GaN Planar Gunn Diodes

    IEEE Transactions on Electron Devices, Vol. 69, Núm. 2, pp. 514-520

2021

  1. Non-linear thermal resistance model for the simulation of high power GaN-based devices

    Semiconductor Science and Technology, Vol. 36, Núm. 5

2019

  1. Design and fabrication of planar gunn nanodiodes based on doped GaN

    Asia-Pacific Microwave Conference Proceedings, APMC

  2. GaN-based SSD structure for THz applications

    Asia-Pacific Microwave Conference Proceedings, APMC

2016

  1. Impact of substrate and thermal boundary resistance on the performance of AlGaN/GaN HEMTs analyzed by means of electro-thermal Monte Carlo simulations

    Semiconductor Science and Technology, Vol. 31, Núm. 6

2015

  1. Evaluation of the thermal resistance in GaN-diodes by means of electro-thermal Monte Carlo simulations

    Proceedings of the 2015 10th Spanish Conference on Electron Devices, CDE 2015

  2. Modelling of thermal boundary resistance in a GaN diode by means of electro-thermal Monte Carlo simulations

    Journal of Physics: Conference Series

  3. Self-consistent electro-thermal simulations of AlGaN/GaN diodes by means of Monte Carlo method

    Semiconductor Science and Technology, Vol. 30, Núm. 3

  4. Temperature and Surface Traps Influence on the THz Emission from InGaAs Diodes

    Journal of Physics: Conference Series

2014

  1. Comparative Monte Carlo analysis of InP- and GaN-based Gunn diodes

    Journal of Applied Physics, Vol. 115, Núm. 4

2013

  1. Numerical study of sub-millimeter Gunn oscillations in InP and GaN vertical diodes: Dependence on bias, doping, and length

    Journal of Applied Physics, Vol. 114, Núm. 7