Javier
Mateos López
Catedrático de Universidad
![Foto de C.](/img/nophoto.png)
C.
Gaquière
Publicacións nas que colabora con C. Gaquière (33)
2021
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Bias-dependence of surface charge at low temperature in GaN Self-Switching Diodes
Proceedings of the 2021 13th Spanish Conference on Electron Devices, CDE 2021
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Monte Carlo analysis of the influence of surface charges on GaN asymmetric nanochannels: Bias and temperature dependence
Journal of Applied Physics, Vol. 130, Núm. 10
2020
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Analysis of trap states in AlGaN/GaN self-switching diodes via impedance measurements
Microelectronics Reliability, Vol. 114
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Trap-related frequency dispersion of zero-bias microwave responsivity at low temperature in GaN-based self-switching diodes
Nanotechnology, Vol. 31, Núm. 40, pp. 405204
2019
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Design and fabrication of planar gunn nanodiodes based on doped GaN
Asia-Pacific Microwave Conference Proceedings, APMC
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GaN-based SSD structure for THz applications
Asia-Pacific Microwave Conference Proceedings, APMC
2018
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GaN nanodiode arrays with improved design for zero-bias sub-THz detection
Semiconductor Science and Technology, Vol. 33, Núm. 9
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Planar Asymmetric Semiconductor Nanodiodes for THz Detection
International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz
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Voltage controlled sub-THz detection with gated planar asymmetric nanochannels
Applied Physics Letters, Vol. 113, Núm. 4
2017
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Geometry and bias dependence of trapping effects in planar GaN nanodiodes
2017 Spanish Conference on Electron Devices, CDE 2017
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Microwave detection up to 43.5 GHz by GaN nanodiodes: Experimental and analytical responsivity
2017 Spanish Conference on Electron Devices, CDE 2017
2016
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Room temperature direct and heterodyne detection of 0.28-0.69-THz Waves Based on GaN 2-DEG unipolar nanochannels
IEEE Transactions on Electron Devices, Vol. 63, Núm. 1, pp. 353-359
2015
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0.69 THz room temperature heterodyne detection using GaN nanodiodes
Journal of Physics: Conference Series
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Erratum: On the effect of δ-doping in self-switching diodes (Applied Physics Letters (2014) 105 (093505))
Applied Physics Letters
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Optimization and small-signal modeling of zero-bias InAs self-switching diode detectors
Solid-State Electronics, Vol. 104, pp. 79-85
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Self-consistent electro-thermal simulations of AlGaN/GaN diodes by means of Monte Carlo method
Semiconductor Science and Technology, Vol. 30, Núm. 3
2014
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GaN-based Implanted self switching diodes for THz imaging
International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz
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Monte Carlo study of the operation of GaN planar nanodiodes as sub-THz emitters in resonant circuits
Semiconductor Science and Technology, Vol. 29, Núm. 11
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On the effect of δ-doping in self-switching diodes
Applied Physics Letters, Vol. 105, Núm. 9
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Operation of GaN planar nanodiodes as THz detectors and mixers
IEEE Transactions on Terahertz Science and Technology, Vol. 4, Núm. 6, pp. 670-677