Publicaciones en las que colabora con Sylvain Bollaert (18)

2018

  1. Impact ionization and band-to-band tunneling in InxGa1-xAs PIN ungated devices: A Monte Carlo analysis

    Journal of Applied Physics, Vol. 123, Núm. 3

2017

  1. Monte Carlo analysis of III-V PIN diodes for tunnel-FETs and Impact Ionization-MOSFETs

    2017 Spanish Conference on Electron Devices, CDE 2017

2015

  1. Improvement of interfacial and electrical properties of Al2O3/ n-Ga0.47In0.53As for III-V impact ionization MOSFETs

    Journal of Physics: Conference Series

  2. Monte Carlo model for the analysis and development of III-V Tunnel-FETs and Impact Ionization-MOSFETs

    Journal of Physics: Conference Series

2010

  1. Monte Carlo study of the dynamic performance of a 100-nm-gate InAlAs/InGaAs velocity modulation transistor

    IEEE Transactions on Electron Devices, Vol. 57, Núm. 10, pp. 2572-2578

2009

  1. Fabrication and fundamentals of operation of an InAlAs/InGaAs velocity modulation transistor

    Applied Physics Letters, Vol. 94, Núm. 10

2008

  1. Ballistic nanodevices for high frequency applications

    International Journal of Nanotechnology, Vol. 5, Núm. 6-8, pp. 796-808

  2. Comparison between the noise performance of double- and single-gate InP-based HEMTs

    IEEE Transactions on Electron Devices, Vol. 55, Núm. 6, pp. 1535-1540

2007

  1. Ballistic nano-devices for high frequency applications

    Thin Solid Films, Vol. 515, Núm. 10, pp. 4321-4326

  2. Comparison between the dynamic performance of double- and single-gate AlInAs/InGaAs HEMTs

    IEEE Transactions on Electron Devices, Vol. 54, Núm. 11, pp. 2815-2822

  3. Monte Carlo comparison between InAlAs/ InGaAs double-gate and standard HEMTs

    2007 Spanish Conference on Electron Devices, Proceedings

  4. Noise behavior of InP-based double-gate and standard HEMTs: A comparison

    AIP Conference Proceedings

2006

  1. InP-based InAlAs/InGaAs double-gate transistors beyond conventional HEMT's limitations

    Proceedings of the 1st European Microwave Integrated Circuits Conference, EuMIC 2006

  2. Monte Carlo comparison between InP-based double-gate and standard HEMTs

    Proceedings of the 1st European Microwave Integrated Circuits Conference, EuMIC 2006

2004

  1. Nonlinear effects in T-branch junctions

    IEEE Electron Device Letters

2003

  1. Ballistic nanodevices for terahertz data processing: Monte Carlo simulations

    Nanotechnology, Vol. 14, Núm. 2, pp. 117-122

  2. Microscopic modeling of nonlinear transport in ballistic nanodevices

    IEEE Transactions on Electron Devices, Vol. 50, Núm. 9, pp. 1897-1905

  3. Room temperature nonlinear transport in InGaAs/AlInAs based ballistic nanodevices

    Conference Proceedings - International Conference on Indium Phosphide and Related Materials