3D Monte Carlo analysis of discrete dopant effects on electron noise in Si devices

  1. Dollfus, P.
  2. Velázquez, J.E.
  3. Bournel, A.
  4. Galdin-Retailleau, S.
Revue:
Journal of Computational Electronics

ISSN: 1569-8025

Année de publication: 2004

Volumen: 3

Número: 3-4

Pages: 311-315

Type: Article

DOI: 10.1007/S10825-004-7067-4 GOOGLE SCHOLAR
La source de données: Scopus