DC performance of deep submicrometer Schottky-gated n-channel Si:SiGe HFETs at low temperatures

  1. Gaspari, V.
  2. Fobelets, K.
  3. Velazquez-Perez, J.E.
  4. Hackbarth, T.
Revue:
IEEE Transactions on Electron Devices

ISSN: 0018-9383

Année de publication: 2005

Volumen: 52

Número: 9

Pages: 2067-2074

Type: Article

DOI: 10.1109/TED.2005.855059 GOOGLE SCHOLAR
La source de données: Scopus