Quasiballistic transport in nanometer Si metal-oxide-semiconductor field-effect transistors: Experimental and Monte Carlo analysis

  1. Łusakowski, J.
  2. Martínez, M.J.M.
  3. Rengel, R.
  4. González, T.
  5. Tauk, R.
  6. Meziani, Y.M.
  7. Knap, W.
  8. Boeuf, F.
  9. Skotnicki, T.
Revista:
Journal of Applied Physics

ISSN: 0021-8979

Any de publicació: 2007

Volum: 101

Número: 11

Tipus: Article

DOI: 10.1063/1.2739307 GOOGLE SCHOLAR