Comparison between the noise performance of double- and single-gate InP-based HEMTs

  1. Vasallo, B.G.
  2. Wichmann, N.
  3. Bollaert, S.
  4. Roelens, Y.
  5. Cappy, A.
  6. González, T.
  7. Pardo, D.
  8. Mateos, J.
Journal:
IEEE Transactions on Electron Devices

ISSN: 0018-9383

Year of publication: 2008

Volume: 55

Issue: 6

Pages: 1535-1540

Type: Article

DOI: 10.1109/TED.2008.921982 GOOGLE SCHOLAR

Sustainable development goals

Data source: Scopus