Comparison between the noise performance of double- and single-gate InP-based HEMTs

  1. Vasallo, B.G.
  2. Wichmann, N.
  3. Bollaert, S.
  4. Roelens, Y.
  5. Cappy, A.
  6. González, T.
  7. Pardo, D.
  8. Mateos, J.
Revue:
IEEE Transactions on Electron Devices

ISSN: 0018-9383

Année de publication: 2008

Volumen: 55

Número: 6

Pages: 1535-1540

Type: Article

DOI: 10.1109/TED.2008.921982 GOOGLE SCHOLAR

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