AlGaN/GaN high electron mobility transistors as a voltage-tunable room temperature terahertz sources

  1. El Fatimy, A.
  2. Dyakonova, N.
  3. Meziani, Y.
  4. Otsuji, T.
  5. Knap, W.
  6. Vandenbrouk, S.
  7. Madjour, K.
  8. Théron, D.
  9. Gaquiere, C.
  10. Poisson, M.A.
  11. Delage, S.
  12. Prystawko, P.
  13. Skierbiszewski, C.
Revista:
Journal of Applied Physics

ISSN: 0021-8979

Any de publicació: 2010

Volum: 107

Número: 2

Tipus: Article

DOI: 10.1063/1.3291101 GOOGLE SCHOLAR