AlGaN/GaN high electron mobility transistors as a voltage-tunable room temperature terahertz sources

  1. El Fatimy, A.
  2. Dyakonova, N.
  3. Meziani, Y.
  4. Otsuji, T.
  5. Knap, W.
  6. Vandenbrouk, S.
  7. Madjour, K.
  8. Théron, D.
  9. Gaquiere, C.
  10. Poisson, M.A.
  11. Delage, S.
  12. Prystawko, P.
  13. Skierbiszewski, C.
Aldizkaria:
Journal of Applied Physics

ISSN: 0021-8979

Argitalpen urtea: 2010

Alea: 107

Zenbakia: 2

Mota: Artikulua

DOI: 10.1063/1.3291101 GOOGLE SCHOLAR