AlGaN/GaN high electron mobility transistors as a voltage-tunable room temperature terahertz sources

  1. El Fatimy, A.
  2. Dyakonova, N.
  3. Meziani, Y.
  4. Otsuji, T.
  5. Knap, W.
  6. Vandenbrouk, S.
  7. Madjour, K.
  8. Théron, D.
  9. Gaquiere, C.
  10. Poisson, M.A.
  11. Delage, S.
  12. Prystawko, P.
  13. Skierbiszewski, C.
Revue:
Journal of Applied Physics

ISSN: 0021-8979

Année de publication: 2010

Volumen: 107

Número: 2

Type: Article

DOI: 10.1063/1.3291101 GOOGLE SCHOLAR