Monte carlo analysis of impact ionization in isolated-gate InAs/AlSb high electron mobility transistors

  1. Vasallo, B.G.
  2. Rodilla, H.
  3. González, T.
  4. Lefebvre, E.
  5. Moschetti, G.
  6. Grahn, J.
  7. Mateos, J.
Journal:
Acta Physica Polonica A

ISSN: 1898-794X,  0587-4246

Year of publication: 2011

Volume: 119

Issue: 2

Pages: 222-224

Type: Conference paper

DOI: 10.12693/APHYSPOLA.119.222 GOOGLE SCHOLAR lock_openOpen access editor
Data source: Scopus