Comprehensive model for ideal reverse leakage current components in Schottky barrier diodes tested in GaN-on-SiC samples

  1. Orfao, B.
  2. Di Gioia, G.
  3. Vasallo, B.G.
  4. Pérez, S.
  5. Mateos, J.
  6. Roelens, Y.
  7. Frayssinet, E.
  8. Cordier, Y.
  9. Zaknoune, M.
  10. González, T.
Zeitschrift:
Journal of Applied Physics

ISSN: 1089-7550,  0021-8979

Datum der Publikation: 2022

Ausgabe: 132

Nummer: 4

Art: Artikel

DOI: 10.1063/5.0100426 GOOGLE SCHOLAR lock_openOpen Access editor
Datenquelle: Scopus