Comprehensive model for ideal reverse leakage current components in Schottky barrier diodes tested in GaN-on-SiC samples

1. Orfao, B.
2. Di Gioia, G.
3. Vasallo, B.G.
4. Pérez, S.
5. Mateos, J.
6. Roelens, Y.
7. Frayssinet, E.
8. Cordier, Y.
9. Zaknoune, M.
10. González, T.

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DOI: 10.1063/5.0100426 GOOGLE SCHOLAR lock_openOpen access editor

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