Comprehensive model for ideal reverse leakage current components in Schottky barrier diodes tested in GaN-on-SiC samples

  1. Orfao, B.
  2. Di Gioia, G.
  3. Vasallo, B.G.
  4. Pérez, S.
  5. Mateos, J.
  6. Roelens, Y.
  7. Frayssinet, E.
  8. Cordier, Y.
  9. Zaknoune, M.
  10. González, T.
Revue:
Journal of Applied Physics

ISSN: 1089-7550,  0021-8979

Année de publication: 2022

Volumen: 132

Número: 4

Type: Article

DOI: 10.1063/5.0100426 GOOGLE SCHOLAR lock_openAccès ouvert editor
La source de données: Scopus