100nm InAlAs/InGaAs double-gate HEMT using transferred substrate
- Wichmann, N
- Duszynski, I
- Bollaert, S
- Mateos, J
- Wallart, X
- Cappy, A
ISBN: 0-7803-8684-1
Datum der Publikation: 2004
Seiten: 1023-1026
Kongress: 50th IEEE International Electron Devices Meeting
Art: Konferenz-Beitrag