100nm InAlAs/InGaAs double-gate HEMT using transferred substrate

  1. Wichmann, N
  2. Duszynski, I
  3. Bollaert, S
  4. Mateos, J
  5. Wallart, X
  6. Cappy, A
Book:
IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2004, TECHNICAL DIGEST

ISBN: 0-7803-8684-1

Year of publication: 2004

Pages: 1023-1026

Congress: 50th IEEE International Electron Devices Meeting

Type: Conference paper

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Data source: WoS