A Deep Learning-Monte Carlo Combined Prediction of Side-Effect Impact Ionization in Highly Doped GaN Diodes

  1. Garcia-Sanchez, S.
  2. Rengel, R.
  3. Perez, S.
  4. Gonzalez, T.
  5. Mateos, J.
Journal:
IEEE Transactions on Electron Devices

ISSN: 1557-9646,  0018-9383

Year of publication: 2023

Volume: 70

Issue: 6

Pages: 2981-2987

Type: Article

DOI: 10.1109/TED.2023.3265625 GOOGLE SCHOLAR
Data source: Scopus