Publications in collaboration with researchers from University of Lille Nord de France (4)

2025

  1. Influence of passivation, doping and geometrical parameters on the avalanche breakdown of GaN SBDs

    Journal of Computational Electronics, Vol. 24, Núm. 6

2024

  1. Reverse-bias current hysteresis at low temperature in GaN Schottky barrier diodes

    Journal of Applied Physics, Vol. 135, Núm. 1

2022

  1. Comprehensive model for ideal reverse leakage current components in Schottky barrier diodes tested in GaN-on-SiC samples

    Journal of Applied Physics, Vol. 132, Núm. 4

2021

  1. Dielectric Passivation and Edge Effects in Planar GaN Schottky Barrier Diodes

    IEEE Transactions on Electron Devices, Vol. 68, Núm. 9, pp. 4296-4301