Gaudencio
Paz Martínez
Personal Docente, Investigador o Técnico
Javier
Mateos López
Catedrático de Universidad
Publications dans lesquelles il/elle collabore avec Javier Mateos López (12)
2024
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A Closed-Form Expression for the Frequency-Dependent Microwave Responsivity of Transistors Based on the I-V Curve and S-Parameters
IEEE Transactions on Microwave Theory and Techniques, Vol. 72, Núm. 1, pp. 415-420
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Multiport Square Law Detectors: Responsivity Matrix Model and Direct Determination of the Optimum Injection Regime
IEEE Transactions on Microwave Theory and Techniques
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Reverse-bias current hysteresis at low temperature in GaN Schottky barrier diodes
Journal of Applied Physics, Vol. 135, Núm. 1
2023
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Analysis of GaN-Based HEMTs Operating as RF Detectors Over a Wide Temperature Range
IEEE Transactions on Microwave Theory and Techniques, Vol. 71, Núm. 7, pp. 3126-3135
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Current and voltage responsivity up to 110 GHz in GaN asymmetric nano-diodes
Applied Physics Letters, Vol. 123, Núm. 12
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High-Frequency Microwave Detection With GaN HEMTs in the Subthreshold Regime
IEEE Transactions on Microwave Theory and Techniques
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Low temperature memory effects in AlGaN/GaN nanochannels
Applied Physics Letters, Vol. 123, Núm. 10
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Responsivity Measurements up to 110 GHz Using AlGaN/GaN HEMTs with Different Gate Size
2023 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits, INMMiC 2023 - Proceedings
2022
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Comparison of GaN and InGaAs high electron mobility transistors as zero-bias microwave detectors
Journal of Applied Physics, Vol. 132, Núm. 13
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Temperature and Gate-Length Dependence of Subthreshold RF Detection in GaN HEMTs
Sensors, Vol. 22, Núm. 4
2021
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Influence of Laser Modulation Frequency on the Performance of Terahertz Photoconductive Switches on Semi-Insulating GaAs Exhibiting Negative Differential Conductance
IEEE Transactions on Terahertz Science and Technology, Vol. 11, Núm. 5, pp. 591-597
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Temperature Behavior of Gunn Oscillations in Planar InGaAs Diodes
IEEE Electron Device Letters, Vol. 42, Núm. 8, pp. 1136-1139