Publicaciones en las que colabora con Ignacio Íñiguez de la Torre Mulas (27)

2024

  1. Reverse-bias current hysteresis at low temperature in GaN Schottky barrier diodes

    Journal of Applied Physics, Vol. 135, Núm. 1

2023

  1. Characterization of trap-related transient-current effects in AlGaN/GaN nanochannels

    2023 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits, INMMiC 2023 - Proceedings

  2. On the Practical Limitations for the Generation of Gunn Oscillations in Highly Doped GaN Diodes

    IEEE Transactions on Electron Devices, Vol. 70, Núm. 7, pp. 3447-3453

2022

  1. Optimization of the Epilayer Design for the Fabrication of Doped GaN Planar Gunn Diodes

    IEEE Transactions on Electron Devices, Vol. 69, Núm. 2, pp. 514-520

2021

  1. Non-linear thermal resistance model for the simulation of high power GaN-based devices

    Semiconductor Science and Technology, Vol. 36, Núm. 5

2019

  1. Design and fabrication of planar gunn nanodiodes based on doped GaN

    Asia-Pacific Microwave Conference Proceedings, APMC

  2. GaN-based SSD structure for THz applications

    Asia-Pacific Microwave Conference Proceedings, APMC

2018

  1. Fabrication Process of Non-Linear Planar Diodes Based on GaN

    Proceedings of the 2018 12th Spanish Conference on Electron Devices, CDE 2018

  2. GaN nanodiode arrays with improved design for zero-bias sub-THz detection

    Semiconductor Science and Technology, Vol. 33, Núm. 9

  3. Planar Asymmetric Semiconductor Nanodiodes for THz Detection

    International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz

  4. Voltage controlled sub-THz detection with gated planar asymmetric nanochannels

    Applied Physics Letters, Vol. 113, Núm. 4

2017

  1. Anomalous DC and RF behavior of virgin AlGaN/AlN/GaN HEMTs

    Semiconductor Science and Technology, Vol. 32, Núm. 3

  2. Geometry and bias dependence of trapping effects in planar GaN nanodiodes

    2017 Spanish Conference on Electron Devices, CDE 2017

  3. Microwave detection up to 43.5 GHz by GaN nanodiodes: Experimental and analytical responsivity

    2017 Spanish Conference on Electron Devices, CDE 2017

2016

  1. Characterization and modeling of traps and RF frequency dispersion in AlGaN/AlN/GaN HEMTs

    EuMIC 2016 - 11th European Microwave Integrated Circuits Conference

  2. Impact of substrate and thermal boundary resistance on the performance of AlGaN/GaN HEMTs analyzed by means of electro-thermal Monte Carlo simulations

    Semiconductor Science and Technology, Vol. 31, Núm. 6

2015

  1. Anomalous low-frequency noise increase at the onset of oscillations in Gunn diodes

    Proceedings of the 2015 10th Spanish Conference on Electron Devices, CDE 2015

  2. Evaluation of the thermal resistance in GaN-diodes by means of electro-thermal Monte Carlo simulations

    Proceedings of the 2015 10th Spanish Conference on Electron Devices, CDE 2015

  3. Experimental verification of low-frequency noise effects at the onset of oscillations in planar Gunn diodes

    2015 International Conference on Noise and Fluctuations, ICNF 2015

  4. Modelling of thermal boundary resistance in a GaN diode by means of electro-thermal Monte Carlo simulations

    Journal of Physics: Conference Series