Javier
Mateos López
Catedrático de Universidad
Ignacio
Íñiguez de la Torre Mulas
Profesor Titular de Universidad
Publications by the researcher in collaboration with Ignacio Íñiguez de la Torre Mulas (102)
2024
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A Closed-Form Expression for the Frequency-Dependent Microwave Responsivity of Transistors Based on the I-V Curve and S-Parameters
IEEE Transactions on Microwave Theory and Techniques, Vol. 72, Núm. 1, pp. 415-420
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Multiport Square Law Detectors: Responsivity Matrix Model and Direct Determination of the Optimum Injection Regime
IEEE Transactions on Microwave Theory and Techniques
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Reverse-bias current hysteresis at low temperature in GaN Schottky barrier diodes
Journal of Applied Physics, Vol. 135, Núm. 1
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Small-signal equivalent circuit model of GaN-based nanodiodes at low temperature including trap-related low frequency dispersion
Journal of Applied Physics, Vol. 135, Núm. 4
2023
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Analysis of GaN-Based HEMTs Operating as RF Detectors Over a Wide Temperature Range
IEEE Transactions on Microwave Theory and Techniques, Vol. 71, Núm. 7, pp. 3126-3135
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Characterization of trap-related transient-current effects in AlGaN/GaN nanochannels
2023 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits, INMMiC 2023 - Proceedings
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Current and voltage responsivity up to 110 GHz in GaN asymmetric nano-diodes
Applied Physics Letters, Vol. 123, Núm. 12
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High-Frequency Microwave Detection With GaN HEMTs in the Subthreshold Regime
IEEE Transactions on Microwave Theory and Techniques
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Low temperature memory effects in AlGaN/GaN nanochannels
Applied Physics Letters, Vol. 123, Núm. 10
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On the Practical Limitations for the Generation of Gunn Oscillations in Highly Doped GaN Diodes
IEEE Transactions on Electron Devices, Vol. 70, Núm. 7, pp. 3447-3453
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Responsivity Measurements up to 110 GHz Using AlGaN/GaN HEMTs with Different Gate Size
2023 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits, INMMiC 2023 - Proceedings
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Trap-assisted enhancement of the responsivity in asymmetric planar GaN-based nanodiodes at low temperature
Nanotechnology, Vol. 34, Núm. 32
2022
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Comparison of GaN and InGaAs high electron mobility transistors as zero-bias microwave detectors
Journal of Applied Physics, Vol. 132, Núm. 13
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Monte Carlo analysis of thermal effects in the DC and AC performance of AlGaN/GaN HEMTs
Solid-State Electronics, Vol. 193
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Optimization of the Epilayer Design for the Fabrication of Doped GaN Planar Gunn Diodes
IEEE Transactions on Electron Devices, Vol. 69, Núm. 2, pp. 514-520
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Temperature and Gate-Length Dependence of Subthreshold RF Detection in GaN HEMTs
Sensors, Vol. 22, Núm. 4
2021
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Bias-dependence of surface charge at low temperature in GaN Self-Switching Diodes
Proceedings of the 2021 13th Spanish Conference on Electron Devices, CDE 2021
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Monte Carlo analysis of the influence of surface charges on GaN asymmetric nanochannels: Bias and temperature dependence
Journal of Applied Physics, Vol. 130, Núm. 10
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Non-linear thermal resistance model for the simulation of high power GaN-based devices
Semiconductor Science and Technology, Vol. 36, Núm. 5
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Temperature Behavior of Gunn Oscillations in Planar InGaAs Diodes
IEEE Electron Device Letters, Vol. 42, Núm. 8, pp. 1136-1139