Publicaciones en las que colabora con Daniel Pardo Collantes (11)

2000

  1. Microscopic analysis of the influence of Ge profiles on the current-noise operation mode of n-Si/p-Si1-xGex heterostructures

    Semiconductor Science and Technology, Vol. 15, Núm. 3, pp. 277-285

  2. Microscopic analysis of voltage noise operation mode in SiGe/Si bipolar heterojunctions: Influence of the SiGe strained layer

    Journal of Applied Physics, Vol. 88, Núm. 3, pp. 1511-1514

1999

  1. 2D bipolar Monte Carlo calculation of current fluctuations at the onset of quasisaturation of a Si BJT

    Physica B: Condensed Matter, Vol. 272, Núm. 1-4, pp. 263-266

1998

  1. Microscopic analysis of the influence of strain and band-gap offsets on noise characteristics in Si1-xGex/Si heterojunctions

    Journal of Applied Physics, Vol. 84, Núm. 9, pp. 5012-5020

1997

  1. Analysis of voltage noise in forward-biased silicon bipolar homojunctions: Low- and high-injection regimes

    Applied Physics Letters, Vol. 71, Núm. 23, pp. 3382-3384

  2. Monte carlo comparative study of current-mode noise in Si/Si1-xGexstrained heterojunctions

    European Solid-State Device Research Conference

  3. Study of current-mode noise of Si1-xGex/Si strained heterojunctions

    Physica Status Solidi (B) Basic Research, Vol. 204, Núm. 1, pp. 462-465

1996

  1. Analysis of current fluctuations in silicon pn+ and p+n homojunctions

    Journal of Applied Physics, Vol. 79, Núm. 9, pp. 6975-6981

  2. Monte Carlo analysis of a Schottky diode with an automatic space-variable charge algorithm

    Semiconductor Science and Technology, Vol. 11, Núm. 3, pp. 380-387

1994

  1. One-dimensional Monte Carlo analysis of electron transport in submicrometre silicon structures

    Semiconductor Science and Technology, Vol. 9, Núm. 7, pp. 1316-1323

1993

  1. Simulation of electron transport in silicon: Impact-ionization processes

    Semiconductor Science and Technology, Vol. 8, Núm. 7, pp. 1291-1297