Ignacio
Íñiguez de la Torre Mulas
Profesor Titular de Universidad
University of Lille Nord de France
Lila, FranciaPublications in collaboration with researchers from University of Lille Nord de France (9)
2024
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Reverse-bias current hysteresis at low temperature in GaN Schottky barrier diodes
Journal of Applied Physics, Vol. 135, Núm. 1
2022
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Comparison of GaN and InGaAs high electron mobility transistors as zero-bias microwave detectors
Journal of Applied Physics, Vol. 132, Núm. 13
2021
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Bias-dependence of surface charge at low temperature in GaN Self-Switching Diodes
Proceedings of the 2021 13th Spanish Conference on Electron Devices, CDE 2021
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Monte Carlo analysis of the influence of surface charges on GaN asymmetric nanochannels: Bias and temperature dependence
Journal of Applied Physics, Vol. 130, Núm. 10
2019
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Design and fabrication of planar gunn nanodiodes based on doped GaN
Asia-Pacific Microwave Conference Proceedings, APMC
2018
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Voltage controlled sub-THz detection with gated planar asymmetric nanochannels
Applied Physics Letters, Vol. 113, Núm. 4
2017
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Anomalous DC and RF behavior of virgin AlGaN/AlN/GaN HEMTs
Semiconductor Science and Technology, Vol. 32, Núm. 3
2015
2014
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On the effect of δ-doping in self-switching diodes
Applied Physics Letters, Vol. 105, Núm. 9