Ignacio
Íñiguez de la Torre Mulas
Profesor Titular de Universidad
Publicaciones (115) Publicaciones de Ignacio Íñiguez de la Torre Mulas
2024
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A Closed-Form Expression for the Frequency-Dependent Microwave Responsivity of Transistors Based on the I-V Curve and S-Parameters
IEEE Transactions on Microwave Theory and Techniques, Vol. 72, Núm. 1, pp. 415-420
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Reverse-bias current hysteresis at low temperature in GaN Schottky barrier diodes
Journal of Applied Physics, Vol. 135, Núm. 1
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Small-signal equivalent circuit model of GaN-based nanodiodes at low temperature including trap-related low frequency dispersion
Journal of Applied Physics, Vol. 135, Núm. 4
2023
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Analysis of GaN-Based HEMTs Operating as RF Detectors Over a Wide Temperature Range
IEEE Transactions on Microwave Theory and Techniques, Vol. 71, Núm. 7, pp. 3126-3135
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Characterization of trap-related transient-current effects in AlGaN/GaN nanochannels
2023 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits, INMMiC 2023 - Proceedings
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Current and voltage responsivity up to 110 GHz in GaN asymmetric nano-diodes
Applied Physics Letters, Vol. 123, Núm. 12
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High-Frequency Microwave Detection With GaN HEMTs in the Subthreshold Regime
IEEE Transactions on Microwave Theory and Techniques
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Low temperature memory effects in AlGaN/GaN nanochannels
Applied Physics Letters, Vol. 123, Núm. 10
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On the Practical Limitations for the Generation of Gunn Oscillations in Highly Doped GaN Diodes
IEEE Transactions on Electron Devices, Vol. 70, Núm. 7, pp. 3447-3453
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Responsivity Measurements up to 110 GHz Using AlGaN/GaN HEMTs with Different Gate Size
2023 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits, INMMiC 2023 - Proceedings
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Trap-assisted enhancement of the responsivity in asymmetric planar GaN-based nanodiodes at low temperature
Nanotechnology, Vol. 34, Núm. 32
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Zn/P ratio and microstructure defines carrier density and electrical transport mechanism in earth-abundant Zn3-xP2+y thin films
Solar Energy Materials and Solar Cells, Vol. 252
2022
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Comparison of GaN and InGaAs high electron mobility transistors as zero-bias microwave detectors
Journal of Applied Physics, Vol. 132, Núm. 13
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Monte Carlo analysis of thermal effects in the DC and AC performance of AlGaN/GaN HEMTs
Solid-State Electronics, Vol. 193
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Optimization of the Epilayer Design for the Fabrication of Doped GaN Planar Gunn Diodes
IEEE Transactions on Electron Devices, Vol. 69, Núm. 2, pp. 514-520
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Temperature and Gate-Length Dependence of Subthreshold RF Detection in GaN HEMTs
Sensors, Vol. 22, Núm. 4
2021
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Bias-dependence of surface charge at low temperature in GaN Self-Switching Diodes
Proceedings of the 2021 13th Spanish Conference on Electron Devices, CDE 2021
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Monte Carlo analysis of the influence of surface charges on GaN asymmetric nanochannels: Bias and temperature dependence
Journal of Applied Physics, Vol. 130, Núm. 10
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Non-linear thermal resistance model for the simulation of high power GaN-based devices
Semiconductor Science and Technology, Vol. 36, Núm. 5
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Temperature Behavior of Gunn Oscillations in Planar InGaAs Diodes
IEEE Electron Device Letters, Vol. 42, Núm. 8, pp. 1136-1139