![Foto de Ignacio](/img/uploaded/c6ce508c78c4d7e62947ccc4774323b7.jpg)
Ignacio
Íñiguez de la Torre Mulas
Profesor Titular de Universidad
Publicaciones (121) Publicaciones de Ignacio Íñiguez de la Torre Mulas
2024
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A Closed-Form Expression for the Frequency-Dependent Microwave Responsivity of Transistors Based on the I-V Curve and S-Parameters
IEEE Transactions on Microwave Theory and Techniques, Vol. 72, Núm. 1, pp. 415-420
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Analysis of the THz Responsivity of AlGaN/GaN HEMTs by Means of Monte Carlo Simulations
IEEE Transactions on Electron Devices, Vol. 71, Núm. 8, pp. 4556-4562
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Guidelines for Overcoming the Practical Limitations for the Fabrication of THz Sources with GaN Planar Gunn Diodes
IEEE Electron Devices Technology and Manufacturing Conference: Strengthening the Globalization in Semiconductors, EDTM 2024
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High-Frequency Microwave Detection with GaN HEMTs in the Subthreshold Regime
IEEE Transactions on Microwave Theory and Techniques, Vol. 72, Núm. 6, pp. 3753-3758
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Influence of Surface States in AlGaN/GaN Nanodiodes Analyzed by Preconditioned Transient Current Measurements
IEEE Transactions on Microwave Theory and Techniques
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Multiport Square Law Detectors: Responsivity Matrix Model and Direct Determination of the Optimum Injection Regime
IEEE Transactions on Microwave Theory and Techniques
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On the Asymmetry of Resistive Switching Transitions
Electronics (Switzerland), Vol. 13, Núm. 13
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Reverse Leakage Current Hysteresis in GaN Schottky Barrier Diodes Interpreted in Terms of a Trap Energy Band
IEEE Transactions on Electron Devices, Vol. 71, Núm. 8, pp. 4524-4529
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Reverse-bias current hysteresis at low temperature in GaN Schottky barrier diodes
Journal of Applied Physics, Vol. 135, Núm. 1
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Small-signal equivalent circuit model of GaN-based nanodiodes at low temperature including trap-related low frequency dispersion
Journal of Applied Physics, Vol. 135, Núm. 4
2023
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Analysis of GaN-Based HEMTs Operating as RF Detectors Over a Wide Temperature Range
IEEE Transactions on Microwave Theory and Techniques, Vol. 71, Núm. 7, pp. 3126-3135
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Characterization of trap-related transient-current effects in AlGaN/GaN nanochannels
2023 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits, INMMiC 2023 - Proceedings
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Current and voltage responsivity up to 110 GHz in GaN asymmetric nano-diodes
Applied Physics Letters, Vol. 123, Núm. 12
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Low temperature memory effects in AlGaN/GaN nanochannels
Applied Physics Letters, Vol. 123, Núm. 10
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On the Practical Limitations for the Generation of Gunn Oscillations in Highly Doped GaN Diodes
IEEE Transactions on Electron Devices, Vol. 70, Núm. 7, pp. 3447-3453
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Responsivity Measurements up to 110 GHz Using AlGaN/GaN HEMTs with Different Gate Size
2023 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits, INMMiC 2023 - Proceedings
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Trap-assisted enhancement of the responsivity in asymmetric planar GaN-based nanodiodes at low temperature
Nanotechnology, Vol. 34, Núm. 32
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Zn/P ratio and microstructure defines carrier density and electrical transport mechanism in earth-abundant Zn3-xP2+y thin films
Solar Energy Materials and Solar Cells, Vol. 252
2022
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Comparison of GaN and InGaAs high electron mobility transistors as zero-bias microwave detectors
Journal of Applied Physics, Vol. 132, Núm. 13
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Monte Carlo analysis of thermal effects in the DC and AC performance of AlGaN/GaN HEMTs
Solid-State Electronics, Vol. 193