University of Lille Nord de France-ko ikertzaileekin lankidetzan egindako argitalpenak (4)

2024

  1. Reverse-bias current hysteresis at low temperature in GaN Schottky barrier diodes

    Journal of Applied Physics, Vol. 135, Núm. 1

2022

  1. Comparison of GaN and InGaAs high electron mobility transistors as zero-bias microwave detectors

    Journal of Applied Physics, Vol. 132, Núm. 13

2018

  1. Voltage controlled sub-THz detection with gated planar asymmetric nanochannels

    Applied Physics Letters, Vol. 113, Núm. 4

2017

  1. Anomalous DC and RF behavior of virgin AlGaN/AlN/GaN HEMTs

    Semiconductor Science and Technology, Vol. 32, Núm. 3