Physically based comparison of current noise analysis of Si BJT's and SiGe HBT's

  1. Martin-Martinez, M.J.
  2. Pardo, D.
Actes de conférence:
European Solid-State Device Research Conference

ISSN: 1930-8876

ISBN: 9782863322482

Année de publication: 2000

Pages: 148-151

Type: Communication dans un congrès

DOI: 10.1109/ESSDERC.2000.194736 GOOGLE SCHOLAR
La source de données: Scopus