Physically based comparison of current noise analysis of Si BJT's and SiGe HBT's

  1. Martin-Martinez, M.J.
  2. Pardo, D.
Actas:
European Solid-State Device Research Conference

ISSN: 1930-8876

ISBN: 9782863322482

Ano de publicación: 2000

Páxinas: 148-151

Tipo: Achega congreso

DOI: 10.1109/ESSDERC.2000.194736 GOOGLE SCHOLAR
Fonte de datos: Scopus