Fabrication and fundamentals of operation of an InAlAs/InGaAs velocity modulation transistor

  1. Wichmann, N.
  2. Vasallo, B.G.
  3. Bollaert, S.
  4. Roelens, Y.
  5. Wallart, X.
  6. Cappy, A.
  7. González, T.
  8. Pardo, D.
  9. Mateos, J.
Journal:
Applied Physics Letters

ISSN: 0003-6951

Year of publication: 2009

Volume: 94

Issue: 10

Type: Article

DOI: 10.1063/1.3095482 GOOGLE SCHOLAR

Sustainable development goals

Data source: Scopus