Fabrication and fundamentals of operation of an InAlAs/InGaAs velocity modulation transistor

  1. Wichmann, N.
  2. Vasallo, B.G.
  3. Bollaert, S.
  4. Roelens, Y.
  5. Wallart, X.
  6. Cappy, A.
  7. González, T.
  8. Pardo, D.
  9. Mateos, J.
Revue:
Applied Physics Letters

ISSN: 0003-6951

Année de publication: 2009

Volumen: 94

Número: 10

Type: Article

DOI: 10.1063/1.3095482 GOOGLE SCHOLAR
La source de données: Scopus