Microscopic modeling of RF noise in laterally asymmetric channel MOSFETs

  1. Rengel, R.
  2. Martín, M.J.
  3. Danneville, F.
Journal:
IEEE Electron Device Letters

ISSN: 0741-3106

Year of publication: 2011

Volume: 32

Issue: 1

Pages: 72-74

Type: Conference paper

DOI: 10.1109/LED.2010.2082488 GOOGLE SCHOLAR
Data source: Scopus