Publications (331) Javier Mateos López publications

2024

  1. A Closed-Form Expression for the Frequency-Dependent Microwave Responsivity of Transistors Based on the I-V Curve and S-Parameters

    IEEE Transactions on Microwave Theory and Techniques, Vol. 72, Núm. 1, pp. 415-420

  2. Analysis of the THz Responsivity of AlGaN/GaN HEMTs by Means of Monte Carlo Simulations

    IEEE Transactions on Electron Devices

  3. Guidelines for Overcoming the Practical Limitations for the Fabrication of THz Sources with GaN Planar Gunn Diodes

    IEEE Electron Devices Technology and Manufacturing Conference: Strengthening the Globalization in Semiconductors, EDTM 2024

  4. High-Frequency Microwave Detection with GaN HEMTs in the Subthreshold Regime

    IEEE Transactions on Microwave Theory and Techniques, Vol. 72, Núm. 6, pp. 3753-3758

  5. Influence of Surface States in AlGaN/GaN Nanodiodes Analyzed by Preconditioned Transient Current Measurements

    IEEE Transactions on Microwave Theory and Techniques

  6. Multiport Square Law Detectors: Responsivity Matrix Model and Direct Determination of the Optimum Injection Regime

    IEEE Transactions on Microwave Theory and Techniques

  7. Reverse Leakage Current Hysteresis in GaN Schottky Barrier Diodes Interpreted in Terms of a Trap Energy Band

    IEEE Transactions on Electron Devices

  8. Reverse-bias current hysteresis at low temperature in GaN Schottky barrier diodes

    Journal of Applied Physics, Vol. 135, Núm. 1

  9. Small-signal equivalent circuit model of GaN-based nanodiodes at low temperature including trap-related low frequency dispersion

    Journal of Applied Physics, Vol. 135, Núm. 4

2023

  1. A Deep Learning-Monte Carlo Combined Prediction of Side-Effect Impact Ionization in Highly Doped GaN Diodes

    IEEE Transactions on Electron Devices, Vol. 70, Núm. 6, pp. 2981-2987

  2. Analysis of GaN-Based HEMTs Operating as RF Detectors Over a Wide Temperature Range

    IEEE Transactions on Microwave Theory and Techniques, Vol. 71, Núm. 7, pp. 3126-3135

  3. Characterization of trap-related transient-current effects in AlGaN/GaN nanochannels

    2023 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits, INMMiC 2023 - Proceedings

  4. Current and voltage responsivity up to 110 GHz in GaN asymmetric nano-diodes

    Applied Physics Letters, Vol. 123, Núm. 12

  5. Low temperature memory effects in AlGaN/GaN nanochannels

    Applied Physics Letters, Vol. 123, Núm. 10

  6. On the Practical Limitations for the Generation of Gunn Oscillations in Highly Doped GaN Diodes

    IEEE Transactions on Electron Devices, Vol. 70, Núm. 7, pp. 3447-3453

  7. Responsivity Measurements up to 110 GHz Using AlGaN/GaN HEMTs with Different Gate Size

    2023 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits, INMMiC 2023 - Proceedings

  8. Role of impact ionization and self-consistent tunnel injection in Schottky-barrier diodes operating under strong reverse-bias conditions

    Applied Physics Express, Vol. 16, Núm. 2

  9. THz Oscillation in Doped-GaN Based Planar Gunn Diode with the T-shape Channel

    2023 18th European Microwave Integrated Circuits Conference, EuMIC 2023

  10. Terahertz Electronic Devices

    Springer Handbooks (Springer Science and Business Media Deutschland GmbH), pp. 807-849

  11. Trap-assisted enhancement of the responsivity in asymmetric planar GaN-based nanodiodes at low temperature

    Nanotechnology, Vol. 34, Núm. 32