Publicaciones en colaboración con investigadores/as de University of Lille Nord de France (9)

2024

  1. Reverse-bias current hysteresis at low temperature in GaN Schottky barrier diodes

    Journal of Applied Physics, Vol. 135, Núm. 1

2022

  1. Comparison of GaN and InGaAs high electron mobility transistors as zero-bias microwave detectors

    Journal of Applied Physics, Vol. 132, Núm. 13

2021

  1. Bias-dependence of surface charge at low temperature in GaN Self-Switching Diodes

    Proceedings of the 2021 13th Spanish Conference on Electron Devices, CDE 2021

  2. Monte Carlo analysis of the influence of surface charges on GaN asymmetric nanochannels: Bias and temperature dependence

    Journal of Applied Physics, Vol. 130, Núm. 10

2019

  1. Design and fabrication of planar gunn nanodiodes based on doped GaN

    Asia-Pacific Microwave Conference Proceedings, APMC

2018

  1. Voltage controlled sub-THz detection with gated planar asymmetric nanochannels

    Applied Physics Letters, Vol. 113, Núm. 4

2017

  1. Anomalous DC and RF behavior of virgin AlGaN/AlN/GaN HEMTs

    Semiconductor Science and Technology, Vol. 32, Núm. 3

2015

  1. Erratum: On the effect of δ-doping in self-switching diodes (Applied Physics Letters (2014) 105 (093505))

    Applied Physics Letters

2014

  1. On the effect of δ-doping in self-switching diodes

    Applied Physics Letters, Vol. 105, Núm. 9